| PartNumber | DMTH10H010LCT | DMTH10H010LPS-13 | DMTH10H010LCTB-13 |
| Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS: 61V-100V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-220-3 | PowerDI5060-8 | TO-220-3 |
| Packaging | Tube | Reel | Reel |
| Series | DMTH10H010 | DMTH10H010 | DMTH10H010 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 2500 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.063493 oz | 0.003422 oz | 0.063493 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 98.4 A | - |
| Rds On Drain Source Resistance | - | 8.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.4 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 53.7 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 125 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 22 ns | - |
| Rise Time | - | 14.1 ns | - |
| Typical Turn Off Delay Time | - | 42.9 ns | - |
| Typical Turn On Delay Time | - | 11.6 ns | - |