DMT6007LF

DMT6007LFG-7 vs DMT6007LFGQ-13 vs DMT6007LFG-13

 
PartNumberDMT6007LFG-7DMT6007LFGQ-13DMT6007LFG-13
DescriptionMOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5WMOSFET MOSFET BVDSS: 41V-60VMOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI-3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance4.5 mOhms6 mOhms-
Vgs th Gate Source Threshold Voltage800 mV800 mV-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge41.3 nC41.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.2 W62.5 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
SeriesDMT6007-DMT6007
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min100 S100 S-
Fall Time9.7 ns9.7 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time4.3 ns4.3 ns-
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time23.4 ns23.4 ns-
Typical Turn On Delay Time5.7 ns5.7 ns-
Qualification-AEC-Q101-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMT6007LFG-7 MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
DMT6007LFGQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMT6007LFG-13 MOSFET 60V N-Ch Enh FET 20Vgss 80A 62.5W
DMT6007LFG-7 Trans MOSFET N-CH 60V 15A Automotive 8-Pin PowerDI EP T/R
DMT6007LF7 Nuovo e originale
DMT6007LFG Nuovo e originale
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