 |  | | |
| PartNumber | DMT31M7LPS-13 | DMT31M6LPS | DMT31M6LPS-13 |
| Description | MOSFET MOSFET BVDSS: 25V-30V | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerDI5060-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 1.7 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 90 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.4 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 34.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16.5 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 49.6 ns | - | - |
| Typical Turn On Delay Time | 6.9 ns | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMT31M7LPS-13 | MOSFET MOSFET BVDSS: 25V-30V | |
| DMT31M6LPS | Nuovo e originale | ||
| DMT31M6LPS-13 | N-CHANNEL ENHANCEMENT MODE MOSFET |