DMN6040SF

DMN6040SFDE-7 vs DMN6040SFDEQ-13 vs DMN6040SFDE-7-80

 
PartNumberDMN6040SFDE-7DMN6040SFDEQ-13DMN6040SFDE-7-80
DescriptionMOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3KMOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseU-DFN2020-E-6U-DFN2020-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current5.3 A6.5 A-
Rds On Drain Source Resistance30 mOhms38 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge22.4 nC22.4 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation660 mW2.03 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMN60--
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time4 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time8.1 ns8.1 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20.1 ns20.1 ns-
Typical Turn On Delay Time6.6 ns6.6 ns-
Unit Weight0.000238 oz0.000229 oz-
Qualification-AEC-Q101-
Forward Transconductance Min-4.5 S-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMN6040SFDE-7 MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K
DMN6040SFDEQ-7 MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
DMN6040SFDEQ-13 MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K
DMN6040SFDE-7-80 Nuovo e originale
DMN6040SFDE-7 MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K
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