DMN4036

DMN4036LK3-13 vs DMN4036LK3Q-13 vs DMN4036LK3

 
PartNumberDMN4036LK3-13DMN4036LK3Q-13DMN4036LK3
DescriptionMOSFET ENHANCE MODE MOSFET 40V N-CHANNELMOSFET MOSFETBVDSS: 31V-40V
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current12.2 A12.2 A-
Rds On Drain Source Resistance26 mOhms26 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge9.2 nC9.2 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation4.12 W8.49 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
ProductMOSFET Small Signal--
SeriesDMN40--
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min19.6 S19.6 S-
Fall Time9.5 ns9.5 ns-
Product TypeMOSFETMOSFET-
Rise Time11.7 ns11.7 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11.6 ns11.6 ns-
Typical Turn On Delay Time3.2 ns3.2 ns-
Unit Weight0.139332 oz0.011640 oz-
Qualification-AEC-Q101-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMN4036LK3-13 MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL
DMN4036LK3Q-13 MOSFET MOSFETBVDSS: 31V-40V
DMN4036LK3 Nuovo e originale
DMN4036LK3Q-13 MOSFET BVDSS: 31V 40V TO252 T&R
DMN4036LK3-13 Darlington Transistors MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL
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