DMN4027SSD

DMN4027SSD-13 vs DMN4027SSD vs DMN4027SSD-13-CUT TAPE

 
PartNumberDMN4027SSD-13DMN4027SSDDMN4027SSD-13-CUT TAPE
DescriptionMOSFET MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current5.4 A--
Rds On Drain Source Resistance27 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge6.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
PackagingReelDigi-ReelR Alternate Packaging-
ProductMOSFET Small Signal--
SeriesDMN40--
Transistor Type2 N-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min22.8 S--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.002610 oz--
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SO-
FET Type-2 N-Channel (Dual)-
Power Max-1.8W-
Drain to Source Voltage Vdss-40V-
Input Capacitance Ciss Vds-604pF @ 20V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-5.4A-
Rds On Max Id Vgs-27 mOhm @ 7A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-12.9nC @ 10V-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMN4027SSD-13 MOSFET MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A
DMN4027SSD Nuovo e originale
DMN4027SSD-13 MOSFET 2N-CH 40V 5.4A 8SO
DMN4027SSD-13-CUT TAPE Nuovo e originale
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