DMN3051

DMN3051L-7 vs DMN3051L vs DMN3051L-7-F

 
PartNumberDMN3051L-7DMN3051LDMN3051L-7-F
DescriptionMOSFET 1.4W 30V 5.8A
ManufacturerDiodes Incorporated-10DIODES
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance38 mOhms--
Vgs th Gate Source Threshold Voltage1.3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.4 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesDMN3051--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandDiodes Incorporated--
Forward Transconductance Min5 S--
Fall Time2.8 ns--
Product TypeMOSFET--
Rise Time6.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.9 ns--
Typical Turn On Delay Time3.4 ns--
Unit Weight0.000282 oz--
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMN3051L-7 MOSFET 1.4W 30V 5.8A
DMN3051LDM-7 MOSFET 30V 4A N-CHANNEL
DMN3051L Nuovo e originale
DMN3051L-7-F Nuovo e originale
DMN3051L-7-F/3N5 Nuovo e originale
DMN3051L-7-HN Nuovo e originale
DMN3051LDM Nuovo e originale
DMN3051LDM-7-F Nuovo e originale
DMN3051L-7 Darlington Transistors MOSFET 1.4W 30V 5.8A
DMN3051LDM-7 MOSFET 30V 4A N-CHANNEL
Top