DMN26D0UFB4-7

DMN26D0UFB4-7 vs DMN26D0UFB4-7B vs DMN26D0UFB4-7-CUT TAPE

 
PartNumberDMN26D0UFB4-7DMN26D0UFB4-7BDMN26D0UFB4-7-CUT TAPE
DescriptionMOSFET ENHANCE MODE MOSFET 20V N-ChanTrans MOSFET N-CH 20V 0.24A Automotive T/R
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseX2-DFN1006-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current240 mA--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
ProductMOSFET Small Signal--
SeriesDMN26--
Transistor Type1 N-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min180 mS--
Fall Time15.2 ns--
Product TypeMOSFET--
Rise Time7.9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.4 ns--
Typical Turn On Delay Time3.8 ns--
Unit Weight0.000028 oz--
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMN26D0UFB4-7 MOSFET ENHANCE MODE MOSFET 20V N-Chan
DMN26D0UFB4-7B Trans MOSFET N-CH 20V 0.24A Automotive T/R
DMN26D0UFB4-7B-55 Nuovo e originale
DMN26D0UFB4-7-CUT TAPE Nuovo e originale
DMN26D0UFB4-7 Trans MOSFET N-CH 20V 0.24A Automotive 3-Pin X2-DFN T/R
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