| PartNumber | DMN10H170SFG-7 | DMN10H170SFG-13 | DMN10H170SFGQ-13 |
| Description | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | MOSFET MOSFET BVDSS: 61V-100V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | PowerDI3333-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 2.9 A | 8.5 A | 3.7 A |
| Rds On Drain Source Resistance | 122 mOhms | 99 mOhms | 133 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 14.9 nC | 14.9 nC | 14.9 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2 W | 2 W | 2 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 4.4 S | - | - |
| Fall Time | 3.4 ns | 3.4 ns | 3.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.3 ns | 2.3 ns | 2.3 ns |
| Factory Pack Quantity | 2000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13.9 ns | 13.9 ns | 13.9 ns |
| Typical Turn On Delay Time | 4.4 ns | 4.4 ns | 4.4 ns |
| Unit Weight | 0.002540 oz | - | - |
| Qualification | - | - | AEC-Q101 |