DMN10H120S

DMN10H120SFG-13 vs DMN10H120SE-13 vs DMN10H120SFG-7

 
PartNumberDMN10H120SFG-13DMN10H120SE-13DMN10H120SFG-7
DescriptionMOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pFMOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nCMOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8SOT-223-4PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current3.8 A3.6 A-
Rds On Drain Source Resistance68 mOhms110 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge10.6 nC10 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W2.1 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
SeriesD0H120DMN10D0H120
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time2.5 ns2.5 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time1.8 ns1.8 ns-
Factory Pack Quantity300025002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time11.5 ns11 ns-
Typical Turn On Delay Time3.8 ns3.8 ns-
Unit Weight-0.003951 oz-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMN10H120SFG-13 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SE-13 MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
DMN10H120SFG-7 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SE-13 Darlington Transistors MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
DMN10H120SFG-7 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SFG-13 MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
DMN10H120SE Nuovo e originale
DMN10H120SFG Nuovo e originale
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