DMJ70H6

DMJ70H600SH3 vs DMJ70H601SK3 vs DMJ70H601SV3

 
PartNumberDMJ70H600SH3DMJ70H601SK3DMJ70H601SV3
DescriptionMOSFET MOSFETBVDSS: 651V-800VMOSFET N-CHANNEL 700V 8A TO251
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage700 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance500 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge18.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation113 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Transistor Type1 N-Channel--
BrandDiodes Incorporated--
Fall Time23 ns--
Product TypeMOSFET--
Rise Time22 ns--
Factory Pack Quantity75--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.011640 oz--
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMJ70H600SH3 MOSFET MOSFETBVDSS: 651V-800V
DMJ70H600SH3 MOSFET BVDSS: 651V800V TO251 TUBE 75PCS
DMJ70H601SK3 Nuovo e originale
DMJ70H601SV3 MOSFET N-CHANNEL 700V 8A TO251
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