PartNumber | DMG2305UX-7 | DMG2305UX-13 | DMG2305UXQ-13 |
Description | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | MOSFET P-Ch ENH FET -20V 52mOhm -5.0V | MOSFET MOSFET BVDSS |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 5 A | 4.2 A | - |
Rds On Drain Source Resistance | 52 mOhms | 52 mOhms | - |
Vgs th Gate Source Threshold Voltage | 900 mV | 900 mV | - |
Vgs Gate Source Voltage | 4.5 V | 8 V | - |
Qg Gate Charge | 10.2 nC | 10.2 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.4 W | 1.4 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Series | DMG2305 | DMG2305 | DMG230 |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 34.7 ns | 34.7 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 13.7 ns | 13.7 ns | - |
Factory Pack Quantity | 3000 | 10000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 79.3 ns | 79.3 ns | - |
Typical Turn On Delay Time | 10.8 ns | 10.8 ns | - |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
Forward Transconductance Min | - | 9 S | - |
Qualification | - | - | AEC-Q101 |