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| PartNumber | DMC4029SK4-13 | DMC4029 | DMC4029SK4 |
| Description | MOSFET MOSFET BVDSS: 31V-40V | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Arrays | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-4 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 8.3 A, 6.1 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms, 33 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 19.1 nC, 21.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.9 W | - | - |
| Configuration | Dual | 1 N-Channel 1 P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 4.8 ns, 25.5 ns | 4.8 ns 25.5 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.1 ns, 19.6 ns | 7.1 ns 19.6 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15.1 ns, 34.9 ns | 15.1 ns 34.9 ns | - |
| Typical Turn On Delay Time | 5.3 ns, 8.7 ns | 5.3 ns 8.7 ns | - |
| Unit Weight | 0.011993 oz | 0.002610 oz | - |
| Series | - | DMC4029 | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SOIC | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 1.3W | - |
| Drain to Source Voltage Vdss | - | 40V | - |
| Input Capacitance Ciss Vds | - | 1060pF @ 20V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 7A, 5.1A | - |
| Rds On Max Id Vgs | - | 24 mOhm @ 6A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 19.1nC @ 10V | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | - 5.1 A 7 A | - |
| Vds Drain Source Breakdown Voltage | - | -40 V 40 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 3 V 3 V | - |
| Rds On Drain Source Resistance | - | 24 mOhms 45 mOhms | - |
| Qg Gate Charge | - | 8.8 nC 21.5 nC | - |
| Forward Transconductance Min | - | - | - |