DMB2

DMB2227A-7 vs DMB2227A vs DMB2AD50DBM3

 
PartNumberDMB2227A-7DMB2227ADMB2AD50DBM3
DescriptionBipolar Transistors - BJT 300mW +/-600mA
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-26-6--
Transistor PolarityNPN, PNPNPN PNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max40 V, 60 V--
Collector Base Voltage VCBO60 V, 75 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT200 MHz, 300 MHz200 MHz 300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDMB2227DMB2227-
Height1.1 mm--
Length3 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.6 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min35--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.001058 oz0.001058 oz-
Package Case-SOT-23-6-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-26-
Power Max-300mW-
Transistor Type-NPN, PNP-
Current Collector Ic Max-600mA-
Voltage Collector Emitter Breakdown Max-40V, 60V-
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 10V-
Vce Saturation Max Ib Ic-1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA-
Current Collector Cutoff Max-10nA (ICBO)-
Frequency Transition-300MHz, 200MHz-
Pd Power Dissipation-300 mW-
Collector Emitter Voltage VCEO Max-40 V 60 V-
Collector Base Voltage VCBO-60 V 75 V-
Emitter Base Voltage VEBO-6 V at NPN 5 V at PNP-
DC Collector Base Gain hfe Min-35-
Produttore Parte # Descrizione RFQ
Diodes Incorporated
Diodes Incorporated
DMB2227A-7 Bipolar Transistors - BJT 300mW +/-600mA
DMB2227A-7 Bipolar Transistors - BJT 300mW +/-600mA
DMB2227A Nuovo e originale
DMB2AD50DBM3 Nuovo e originale
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