| PartNumber | BUL216 | BUL213 |
| Description | Bipolar Transistors - BJT NPN Hi-Volt Fast Sw | Bipolar Transistors - BJT NPN Hi-Volt Fast Sw |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 800 V | 600 V |
| Collector Base Voltage VCBO | 1600 V | 1300 V |
| Emitter Base Voltage VEBO | 9 V | 9 V |
| Collector Emitter Saturation Voltage | 1 V | - |
| Maximum DC Collector Current | 4 A | 3 A |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BUL216 | BUL213 |
| Height | 9.15 mm (Max) | 9.15 mm (Max) |
| Length | 10.4 mm (Max) | 10.4 mm (Max) |
| Packaging | Tube | Tube |
| Width | 4.6 mm (Max) | 4.6 mm (Max) |
| Brand | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 4 A | 3 A |
| Pd Power Dissipation | 90 W | 60 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| DC Current Gain hFE Max | - | 36 |
| DC Collector/Base Gain hfe Min | - | 16 |