BUK6

BUK626R2-40C,118 vs BUK625R2-30C,118 vs BUK625R0-40C,118

 
PartNumberBUK626R2-40C,118BUK625R2-30C,118BUK625R0-40C,118
DescriptionMOSFET N-Chan 30V 90AMOSFET N-CH 30V 90A DPAKIGBT Transistors MOSFET N-CHAN 40V 90A
ManufacturerNexperia-NXP Semiconductors
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Unit Weight0.011993 oz--
Series--Automotive, AEC-Q101, TrenchMOS
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature---55°C ~ 175°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--DPAK
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--158W
Drain to Source Voltage Vdss--40V
Input Capacitance Ciss Vds--5200pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--90A (Tc)
Rds On Max Id Vgs--5 mOhm @ 25A, 10V
Vgs th Max Id--2.8V @ 1mA
Gate Charge Qg Vgs--88nC @ 10V
Produttore Parte # Descrizione RFQ
Nexperia
Nexperia
BUK626R2-40C,118 MOSFET N-Chan 30V 90A
BUK626R2-40C,118 MOSFET N-CH 40V 90A DPAK
BUK625R2-30C,118 MOSFET N-CH 30V 90A DPAK
BUK625R0-40C,118 IGBT Transistors MOSFET N-CHAN 40V 90A
BUK6507-75C,127 IGBT Transistors MOSFET N-CHAN 75V 100A
BUK653R3-30C,127 RF Bipolar Transistors MOSFET N-Chan 30V 100A
NXP Semiconductors
NXP Semiconductors
BUK652R0-30C,127 MOSFET N-CH 30V 120A TO220AB
BUK652R1-30C,127 MOSFET N-CH 30V 120A TO220AB
BUK652R3-40C,127 MOSFET N-CH 40V 120A TO220AB
BUK652R6-40C,127 MOSFET N-CH 40V 120A TO220AB
BUK652R7-30C,127 MOSFET N-CH 30V 100A TO220AB
BUK653R2-55C,127 MOSFET N-CH 55V 120A TO220AB
BUK653R4-40C,127 MOSFET N-CH 40V 100A TO220AB
BUK6507-55C,127 IGBT Transistors MOSFET N-CHAN 55V 100A
BUK6510-75C,127 IGBT Transistors MOSFET N-CHAN 75V 77A
BUK625R0-40C Nuovo e originale
BUK625R0-40C118 - Bulk (Alt: BUK625R0-40C118)
BUK625R2-30C Nuovo e originale
BUK625R2-30C118 Nuovo e originale
BUK626R2-40C Nuovo e originale
BUK626R2-40C118 Nuovo e originale
BUK627 Nuovo e originale
BUK637-400A Nuovo e originale
BUK637-400B Nuovo e originale
BUK637-450A Nuovo e originale
BUK638-1000A Nuovo e originale
BUK638-500A Nuovo e originale
BUK638-500AB Nuovo e originale
BUK638-800A Nuovo e originale
BUK647-500B Nuovo e originale
BUK6507-55C Nuovo e originale
BUK6507-55C127 - Bulk (Alt: BUK6507-55C127)
BUK6507-75C Nuovo e originale
BUK6507-75C127 - Bulk (Alt: BUK6507-75C127)
BUK6510-75C127 Now Nexperia BUK6510-75C - Power Field-Effect Transistor, 77A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R0-30C Nuovo e originale
BUK652R0-30C127 Now Nexperia BUK652R0-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R1-30C127 Now Nexperia BUK652R1-30C - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R3-40C MOSFET,N CH,40V,120A,SOT78
BUK652R3-40C127 Now Nexperia BUK652R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R6-40C127 Now Nexperia BUK652R6-40C - Power Field-Effect Transistor, 100A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK652R7-30C127 Now Nexperia BUK652R7-30C - Power Field-Effect Transistor, 100A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUK653R2-55C Nuovo e originale
BUK653R2-55C127 - Bulk (Alt: BUK653R2-55C127)
BUK653R3-30C Nuovo e originale
BUK653R4-40C127 - Bulk (Alt: BUK653R4-40C127)
BUK638500B INSTOCK
BUK625RO-40C Nuovo e originale
BUK653R5-55C - Bulk (Alt: BUK653R5-55C)
BUK637-500B Nuovo e originale
Top