BTS244ZE

BTS244ZE3062AATMA2 vs BTS244ZE3043AKSA2

 
PartNumberBTS244ZE3062AATMA2BTS244ZE3043AKSA2
DescriptionMOSFET N-Ch 55V 19A D2PAK-4MOSFET N-Ch 55V 19A TO220-5
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
TechnologySiSi
Mounting StyleSMD/SMTThrough Hole
Package / CaseTO-263-5TO-220-5
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V
Id Continuous Drain Current19 A19 A
Rds On Drain Source Resistance13 mOhms13 mOhms
Vgs th Gate Source Threshold Voltage1.6 V1.6 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge85 nC85 nC
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation170 W170 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
PackagingReelTube
Height4.4 mm15.65 mm
Length10 mm10 mm
Transistor Type1 N-Channel1 N-Channel
Width9.25 mm4.4 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min25 S25 S
Fall Time25 ns25 ns
Product TypeMOSFETMOSFET
Rise Time70 ns70 ns
Factory Pack Quantity1000500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time40 ns40 ns
Typical Turn On Delay Time15 ns15 ns
Part # AliasesBTS244Z E3062A SP000910844BTS244Z E3043 SP000969782
Unit Weight0.056438 oz0.105822 oz
Series-BTS244
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
BTS244ZE3062AATMA2 MOSFET N-Ch 55V 19A D2PAK-4
BTS244ZE3043AKSA2 MOSFET N-Ch 55V 19A TO220-5
BTS244ZE3062AATMA2 MOSFET N-Ch 55V 19A D2PAK-4
BTS244ZE3043AKSA2 MOSFET N-Ch 55V 19A TO220-5
BTS244ZE-3043 Nuovo e originale
BTS244ZE3040 Nuovo e originale
BTS244ZE3043 Power Field-Effect Transisto
BTS244ZE3062A Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS244ZE3062AATMA1 Power Field-Effect Transisto
BTS244ZE3062ANTMA1 - Bulk (Alt: BTS244ZE3062ANTMA1)
BTS244ZE3062ANTMA118 Nuovo e originale
BTS244ZE3062ANTMA1180 Nuovo e originale
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