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| PartNumber | BSZ097N04LSGATMA1 | BSZ097N04LS G |
| Description | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | PG-TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V |
| Id Continuous Drain Current | 40 A | 40 A |
| Rds On Drain Source Resistance | 8.1 mOhms | 14.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 10 V |
| Qg Gate Charge | 24 nC | 18 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 35 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 24 S | 24 S |
| Fall Time | 2.8 ns | 2.8 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 2.4 ns | 2.4 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 16 ns |
| Typical Turn On Delay Time | 3.5 ns | 3.5 ns |
| Part # Aliases | BSZ097N04LS BSZ97N4LSGXT G SP000388296 | BSZ097N04LSGATMA1 BSZ97N4LSGXT SP000388296 |
| Unit Weight | 0.005326 oz | 0.009877 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ097N04LSGATMA1 | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | |
| BSZ097N04LS G | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ097N04LS G | Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP | ||
| BSZ097N04LSGATMA1 | MOSFET N-CH 40V 40A TSDSON-8 | ||
| BSZ097N04L | Nuovo e originale | ||
| BSZ097N04LSG | POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 40V, 0.0142OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSZ097N04LSGATMA1-CUT TAPE | Nuovo e originale |