 | | | |
| PartNumber | BSP716N | BSP716N H6327 | BSP716NH6327 |
| Description | 75V,180m��,2.3A,N-Ch Small-Signal MOSFET | ||
| Manufacturer | Infineon Technologies | - | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single | - | Transistors - FETs, MOSFETs - Single |
| Packaging | Reel | - | Reel |
| Part Aliases | BSP716N H6327 SP001087514 | - | BSP716N H6327 SP001087514 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | SOT-223-4 | - | SOT-223-4 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Pd Power Dissipation | 1.8 W | - | 1.8 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 16.7 ns | - | 16.7 ns |
| Rise Time | 5.5 ns | - | 5.5 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 2.3 A | - | 2.3 A |
| Vds Drain Source Breakdown Voltage | 75 V | - | 75 V |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | 800 mV |
| Rds On Drain Source Resistance | 160 mOhms | - | 160 mOhms |
| Transistor Polarity | P-Channel | - | P-Channel |
| Typical Turn Off Delay Time | 50.1 ns | - | 50.1 ns |
| Typical Turn On Delay Time | 4.6 ns | - | 4.6 ns |
| Qg Gate Charge | 8.7 nC | - | 8.7 nC |
| Channel Mode | Enhancement | - | Enhancement |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP716NH6327XTSA1 | MOSFET SMALL SIGNAL+N-CH | |
| BSP716NH6327XTSA1 | MOSFET N-CH 75V 2.3A SOT223 | ||
| BSP716N | Nuovo e originale | ||
| BSP716N H6327 | Nuovo e originale | ||
| BSP716NH6327 | 75V,180m��,2.3A,N-Ch Small-Signal MOSFET | ||
| BSP718N | Nuovo e originale |