 |  | | |
| PartNumber | BSL207SPH6327XTSA1 | BSL207SPH6327XTSA1650 | BSL207SPH6327 |
| Description | MOSFET SMALL SIGNAL+P-CH | Infineon P-Channel Power MOSFET BSL207SP - TSOP6-6-6 | MOSFET, P-CH, -20V, -6A, TSOP-6 |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 29 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | - 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Reel |
| Height | 1.1 mm | - | - |
| Length | 3 mm | - | - |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Width | 1.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 53 ns | - | 53 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 17 ns | - | 17 ns |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 42 ns | - | 42 ns |
| Typical Turn On Delay Time | 9 ns | - | 9 ns |
| Part # Aliases | BSL207SP H6327 SP001100650 | - | - |
| Part Aliases | - | - | BSL207SP H6327 SP001100650 |
| Package Case | - | - | TSOP-6 |
| Pd Power Dissipation | - | - | 2 W |
| Vgs Gate Source Voltage | - | - | +/- 12 V |
| Id Continuous Drain Current | - | - | - 6 A |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 1.2 V |
| Rds On Drain Source Resistance | - | - | 65 mOhms |
| Qg Gate Charge | - | - | - 1.7 nC |
| Forward Transconductance Min | - | - | 7 S |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL207SPH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL207SPH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL207SPH6327XTSA1650 | Infineon P-Channel Power MOSFET BSL207SP - TSOP6-6-6 | ||
| BSL207SPH6327 | MOSFET, P-CH, -20V, -6A, TSOP-6 |