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| PartNumber | BSF050N03LQ3G | BSF050N03LQ3GXUMA1 | BSF050N03LQ3 G |
| Description | Power Field-Effect Transistor, 15A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET N-CH 30V 60A 2WDSON | IGBT Transistors MOSFET N-Ch 30V 60A CanPAK-2 SQ |
| Manufacturer | INF | - | Infineon Technologies |
| Product Category | FETs - Single | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | BSF050N03 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSF050N03LQ3GXUMA1 SP000604522 |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | WDSON-2 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Dual Drain |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 28 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 40 C |
| Fall Time | - | - | 3.2 ns |
| Rise Time | - | - | 3.4 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 60 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 18 nS |
| Qg Gate Charge | - | - | 25 nC |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| BSF050N03LQ3G | Power Field-Effect Transistor, 15A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSF050N03LQ3 G | IGBT Transistors MOSFET N-Ch 30V 60A CanPAK-2 SQ | ||
Infineon Technologies |
BSF050N03LQ3GXUMA1 | MOSFET N-CH 30V 60A 2WDSON |