 |  | | |
| PartNumber | BSC670N25NSFDATMA1 | BSC600N25NS3 G | BSC600N25NS3GATMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V | 250 V |
| Id Continuous Drain Current | 24 A | 25 A | 25 A |
| Rds On Drain Source Resistance | 59 mOhms | 50 mOhms | 50 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 30 nC | 29 nC | 29 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 150 W | 125 W | 125 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Series | OptiMOS Fast Diode | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 24 S | 25 S | 25 S |
| Fall Time | 4 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.6 ns | 10 ns | 10 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 22 ns | 22 ns |
| Typical Turn On Delay Time | 8 ns | 10 ns | 10 ns |
| Part # Aliases | BSC670N25NSFD SP001107234 | BSC600N25NS3GATMA1 BSC6N25NS3GXT SP000676402 | BSC600N25NS3 BSC6N25NS3GXT G SP000676402 |
| Height | - | 1.27 mm | 1.27 mm |
| Length | - | 5.9 mm | 5.9 mm |
| Type | - | OptiMOS 3 Power-Transistor | - |
| Width | - | 5.15 mm | 5.15 mm |
| Unit Weight | - | 0.003527 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC670N25NSFDATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC600N25NS3 G | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 | ||
| BSC600N25NS3GATMA1 | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 | ||
| BSC670N25NSFDATMA1 | MOSFET N-CH 250V 24A 8TDSON | ||
| BSC600N25NS3GATMA1 | MOSFET N-CH 250V 25A TDSON-8 | ||
| BSC60025NS3G | Nuovo e originale | ||
| BSC600N25NS | Nuovo e originale | ||
| BSC600N25NS3 | Nuovo e originale | ||
| BSC600N25NS3 G | Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: BSC600N25NS3 G) | ||
| BSC600N25NS3G | POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSC600N25NS3GS | Nuovo e originale |