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| PartNumber | BSC084P03NS3GATMA1 | BSC084P03NS3G | BSC084P03NS3GATMA1 , TDM |
| Description | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | MOSFET, P-CH, -30V, -78.6A, TDSON | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 78.6 A | - | - |
| Rds On Drain Source Resistance | 6.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 58 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | BSC084P03 | BSC084P03 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 33 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 134 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | BSC084P03NS3 BSC84P3NS3GXT G SP000473020 | - | - |
| Unit Weight | 0.016014 oz | - | - |
| Part Aliases | - | BSC084P03NS3 BSC084P03NS3GXT G SP000473020 | - |
| Package Case | - | TDSON-8 | - |