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| PartNumber | BSC042NE7NS3GATMA1 | BSC042NE7NS3G |
| Description | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | FETs - Single |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TDSON-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | - |
| Id Continuous Drain Current | 100 A | - |
| Rds On Drain Source Resistance | 3.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 69 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 125 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 1.27 mm | - |
| Length | 5.9 mm | - |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 44 S | - |
| Fall Time | 9 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 17 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 34 ns | - |
| Typical Turn On Delay Time | 14 ns | - |
| Part # Aliases | BSC042NE7NS3 BSC42NE7NS3GXT G SP000657440 | - |
| Unit Weight | 0.004293 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC042NE7NS3GATMA1 | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | |
| BSC042NE7NS3GATMA1 | MOSFET N-CH 75V 100A TDSON-8 | ||
| BSC042NE7NS3G | Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP |