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| PartNumber | BSC031N06NS3 G | BSC031N06NS3 | BSC031N06NS3G |
| Description | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | INFINEON | INF |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 3.1 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 16 ns | 16 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 161 ns | 161 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 63 ns | 63 ns | - |
| Typical Turn On Delay Time | 38 ns | 38 ns | - |
| Part # Aliases | BSC031N06NS3GATMA1 BSC31N6NS3GXT SP000451482 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Part Aliases | - | BSC031N06NS3GATMA1 BSC031N06NS3GXT SP000451482 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 3.1 mOhms | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC031N06NS3 G | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | |
| BSC031N06NS3GATMA1 | MOSFET N-CH 60V 100A TDSON-8 | ||
| BSC031N06NS3 | Nuovo e originale | ||
| BSC031N06NS3 G | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R | ||
| BSC031N06NS3G | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC031N06NS3GATMA1 , TDA | Nuovo e originale |