BSC024NE

BSC024NE2LSATMA1 vs BSC024NE2LS vs BSC024NE2LSXT

 
PartNumberBSC024NE2LSATMA1BSC024NE2LSBSC024NE2LSXT
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8PG-TDSON-8TDSON-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V25 V
Id Continuous Drain Current100 A100 A100 A
Rds On Drain Source Resistance2 mOhms2.4 mOhms2 mOhms
Vgs th Gate Source Threshold Voltage1.2 V1.2 V1.2 V
Vgs Gate Source Voltage20 V10 V20 V
Qg Gate Charge23 nC23 nC23 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation48 W48 W48 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.27 mm1.27 mm1.27 mm
Length5.9 mm5.9 mm5.9 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.15 mm5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min55 S55 S55 S
Fall Time2.6 ns2.6 ns2.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time3.6 ns3.6 ns3.6 ns
Factory Pack Quantity500050005000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time19 ns19 ns19 ns
Typical Turn On Delay Time4.1 ns4.1 ns4.1 ns
Part # AliasesBSC024NE2LS BSC24NE2LSXT SP000756342BSC024NE2LSATMA1 BSC24NE2LSXT SP000756342BSC024NE2LS BSC024NE2LSATMA1 SP000756342
Unit Weight0.004159 oz0.006702 oz-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
BSC024NE2LSATMA1 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC024NE2LS MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC024NE2LSXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC024NE2LSATMA1 MOSFET N-CH 25V 25A TDSON-8
BSC024NE2LS Trans MOSFET N-CH 25V 25A 8-Pin TDSON T/R (Alt: BSC024NE2LS)
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