BSC018NE2LSI

BSC018NE2LSI vs BSC018NE2LSI BSC018NE2LS vs BSC018NE2LSI QFN8

 
PartNumberBSC018NE2LSIBSC018NE2LSI BSC018NE2LSBSC018NE2LSI QFN8
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance1.5 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge48 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation69 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min65 S--
Fall Time3.6 ns--
Product TypeMOSFET--
Rise Time4.8 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time5.2 ns--
Part # AliasesBSC018NE2LSIATMA1 BSC18NE2LSIXT SP000906030--
Unit Weight0.004176 oz--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
BSC018NE2LSI MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSIATMA1 MOSFET N-CH 25V 29A TDSON-8
BSC018NE2LSIXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC018NE2LSI Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC018NE2LSI BSC018NE2LS Nuovo e originale
BSC018NE2LSI QFN8 Nuovo e originale
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