 | | | |
| PartNumber | BFR840L3RHESD | BFR840L3RHESD E6327 | BFR840L3RHESDE6327 |
| Description | |||
| Manufacturer | - | - | INFINEON |
| Product Category | - | - | Transistors - Bipolar (BJT) - RF |
| Series | - | - | BFR840L3 |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Part Aliases | - | - | 840L3RHESD BFR BFR840L3RHESDE6327XT E6327 SP000978848 |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SC-101, SOT-883 |
| Technology | - | - | SiGe |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TSLP-3-9 |
| Configuration | - | - | Single |
| Power Max | - | - | 75mW |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 35mA |
| Voltage Collector Emitter Breakdown Max | - | - | 2.6V |
| DC Current Gain hFE Min Ic Vce | - | - | 150 @ 10mA, 1.8V |
| Frequency Transition | - | - | 75GHz |
| Noise Figure dB Typ f | - | - | 0.5dB @ 450MHz |
| Gain | - | - | 27dB |
| Pd Power Dissipation | - | - | 75 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Operating Frequency | - | - | 75 GHz |
| Collector Emitter Voltage VCEO Max | - | - | 2.25 V |
| Emitter Base Voltage VEBO | - | - | 2.9 V |
| Continuous Collector Current | - | - | 35 mA |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BFR843EL3E6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | |
| BFR840L3RHESDE6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | ||
| BFR840L3RHESD | Nuovo e originale | ||
| BFR840L3RHESD E6327 | Nuovo e originale | ||
| BFR840L3RHESDE6327 | Nuovo e originale | ||
| BFR843EL3E6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | ||
| BFR840L3RHESDE6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | ||
| BFR84 | Nuovo e originale | ||
| BFR843EL3 E6327 | Nuovo e originale | ||
| BFR840L3RHESD BOARD | Eval Board for BFR840L3RHESD Transistor (Alt: SP000982226) | ||
| BFR840L3RHESDE6327XTSA1-CUT TAPE | Nuovo e originale |