 |  | |
| PartNumber | BFP840FESDH6327XTSA1 | BFP840FESDH6327 |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | |
| Manufacturer | Infineon | - |
| Product Category | RF Bipolar Transistors | - |
| RoHS | Y | - |
| Series | BFP840 | - |
| Transistor Type | Bipolar | - |
| Technology | SiGe | - |
| Collector Emitter Voltage VCEO Max | 2.25 V | - |
| Emitter Base Voltage VEBO | 2.6 V | - |
| Continuous Collector Current | 35 mA | - |
| Maximum Operating Temperature | + 150 C | - |
| Configuration | Dual | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSFP-4 | - |
| Packaging | Reel | - |
| Operating Frequency | 85 GHz | - |
| Type | RF Silicon Germanium | - |
| Brand | Infineon Technologies | - |
| Pd Power Dissipation | 75 mW | - |
| Product Type | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 840FESD BFP BFP84FESDH6327XT H6327 SP000977846 | - |
| Unit Weight | 0.000063 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BFP840FESDH6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | |
| BFP840FESDH6327 | Nuovo e originale | ||
| BFP840FESDH6327XTSA1 | RF TRANS NPN 2.6V 85GHZ 4TSFP |