BF1105

BF1105R,215 vs BF1105WR,115 vs BF1105,215

 
PartNumberBF1105R,215BF1105WR,115BF1105,215
DescriptionRF MOSFET Transistors Trans MOSFET N-CH 7V 0.03A 4pin(3+Tab)RF MOSFET Transistors TAPE-7 MOS-RFSSRF MOSFET Transistors Dual N-Channel 7V 30mA 200mW
ManufacturerNXP--
Product CategoryRF MOSFET Transistors--
RoHSY--
Transistor PolarityDual N-Channel--
TechnologySi--
Id Continuous Drain Current30 mA--
Vds Drain Source Breakdown Voltage7 V, 7 V--
Rds On Drain Source Resistance---
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Mounting StyleSMD/SMT--
Package / CaseSOT-143R-4--
PackagingReel--
ConfigurationSingle Dual Gate--
Height1 mm--
Length3 mm--
TypeRF Small Signal MOSFET--
Width1.4 mm--
BrandNXP Semiconductors--
Channel ModeEnhancement--
Pd Power Dissipation200 mW--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Vgs Gate Source Voltage7 V, 7 V--
Vgs th Gate Source Threshold Voltage0.8 V--
Part # Aliases934050330215--
Unit Weight0.000321 oz--
Produttore Parte # Descrizione RFQ
NXP Semiconductors
NXP Semiconductors
BF1105R,215 RF MOSFET Transistors Trans MOSFET N-CH 7V 0.03A 4pin(3+Tab)
BF1105WR115 RF Small Signal Field-Effect Transistor 1-Element Ultra High Frequency Band, Silicon, N-Channel, MosFET
BF1105WR,135 RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW
BF1105WR,115 RF MOSFET Transistors TAPE-7 MOS-RFSS
BF1105,215 RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW
BF1105R,215 RF MOSFET Transistors Trans MOSFET N-CH 7V 0.03A 4pin(3+Tab)
BF1105 Nuovo e originale
BF1105R Nuovo e originale
BF1105WR INSTOCK
BF1105WR /NA Nuovo e originale
BF1105WR T/R RF MOSFET Transistors TAPE-7 MOS-RFSS
BF1105R,215-CUT TAPE Nuovo e originale
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