 |  | |
| PartNumber | BDP953H6327XTSA1 | BDP953H6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTORS | |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-223-4 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 100 V | - |
| Collector Base Voltage VCBO | 120 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 500 mV | - |
| Maximum DC Collector Current | 5 A | - |
| Gain Bandwidth Product fT | 100 MHz | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 3 A | - |
| Pd Power Dissipation | 5 W | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 953 BDP H6327 SP000748526 | - |
| Part Aliases | - | 953 BDP H6327 SP000748526 |
| Package Case | - | SOT-223-4 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BDP953H6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTORS | |
Infineon Technologies |
BDP953H6327 | Nuovo e originale | |
| BDP953H6327XTSA1 | TRANS NPN 100V 3A SOT223 |