 |  |  | |
| PartNumber | BD434S | BD434 | BD434-S |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Medium Power | |
| Manufacturer | ON Semiconductor | STMicroelectronics | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-126-3 | SOT-32-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 22 V | 22 V | - |
| Collector Base Voltage VCBO | - 22 V | 22 V | - |
| Emitter Base Voltage VEBO | - 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | - 0.2 V | 0.2 V | - |
| Maximum DC Collector Current | 4 A | 4 A | - |
| Gain Bandwidth Product fT | 3 MHz | 3 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BD434 | BD434 | - |
| Height | 11 mm | 10.8 mm | - |
| Length | 8 mm | 7.8 mm | - |
| Packaging | Bulk | Tube | - |
| Width | 3.25 mm | 2.7 mm | - |
| Brand | ON Semiconductor / Fairchild | STMicroelectronics | - |
| DC Collector/Base Gain hfe Min | 40 | 40 | - |
| Pd Power Dissipation | 36 W | 36 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 2000 | 50 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BD434S_NL | - | - |
| Unit Weight | 0.026843 oz | 0.002116 oz | - |
| DC Current Gain hFE Max | - | 130 | - |
| Continuous Collector Current | - | 4 A | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
BD434S | Bipolar Transistors - BJT PNP Epitaxial Sil | |
STMicroelectronics |
BD434 | Bipolar Transistors - BJT PNP Medium Power | |
ON Semiconductor |
BD434 | TRANS PNP 22V 4A SOT-32 | |
| BD434-S | Nuovo e originale | ||
| BD434STU | TRANS PNP 22V 4A TO-126 | ||
| BD434S | Bipolar Transistors - BJT PNP Epitaxial Sil |