 |  |  | |
| PartNumber | BD13510STU | BD13510S | BD13516 |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | TRANS NPN 45V 1.5A TO-126 | Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin |
| Manufacturer | ON Semiconductor | - | Fairchild Semiconductor |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-126-3 | - | - |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 45 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | 0.5 V |
| Maximum DC Collector Current | 1.5 A | - | 1.5 A |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | BD135 | - | - |
| DC Current Gain hFE Max | 250 | - | 250 |
| Height | 1.5 mm | - | - |
| Length | 8 mm | - | - |
| Packaging | Tube | - | Bulk |
| Width | 3.25 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 1.5 A | - | 1.5 A |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Pd Power Dissipation | 12.5 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1920 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BD13510STU_NL | - | - |
| Unit Weight | 0.026843 oz | - | 0.026843 oz |
| Package Case | - | - | TO-225AA, TO-126-3 |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-126 |
| Power Max | - | - | 1.25W |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 1.5A |
| Voltage Collector Emitter Breakdown Max | - | - | 45V |
| DC Current Gain hFE Min Ic Vce | - | - | 100 @ 150mA, 2V |
| Vce Saturation Max Ib Ic | - | - | 500mV @ 50mA, 500mA |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | - |
| Pd Power Dissipation | - | - | 12.5 W |
| Collector Emitter Voltage VCEO Max | - | - | 45 V |
| Collector Base Voltage VCBO | - | - | 45 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 40 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
BD13516S | Bipolar Transistors - BJT NPN Epitaxial Sil | |
| BD13510STU | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | ||
| BD13516STU | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
ON Semiconductor |
BD13510S | TRANS NPN 45V 1.5A TO-126 | |
| BD13516 | Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin | ||
| BD13516STU | TRANS NPN 45V 1.5A TO-126 | ||
| BD13510STU | TRANS NPN 45V 1.5A TO-126 | ||
| BD13516S | TRANS NPN 45V 1.5A TO-126 |