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BC817K40E632

BC817K40E6327HTSA1 vs BC817K40E6327 vs BC817K40E6327HTSA1/INFIN

 
PartNumberBC817K40E6327HTSA1BC817K40E6327BC817K40E6327HTSA1/INFIN
DescriptionBipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
ManufacturerInfineon--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.7 V--
Maximum DC Collector Current1000 mA--
Gain Bandwidth Product fT170 MHz--
Maximum Operating Temperature+ 150 C--
SeriesBC817--
DC Current Gain hFE Max630 at 100 mA, 1 V--
Height1 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandInfineon Technologies--
Continuous Collector Current500 mA--
DC Collector/Base Gain hfe Min250 at 100 mA, 1 V--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases817K-40 BC BC817K4E6327XT E6327 SP000271895--
Unit Weight0.000282 oz--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies 		BC817K40E6327HTSA1 Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5
BC817K40E6327XT Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5
BC817K40E6327HTSA1 TRANS NPN 45V 0.5A SOT-23
BC817K40E6327XT Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5
BC817K40E6327 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC817K40E6327HTSA1/INFIN Nuovo e originale
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