AUIRLR120NT

AUIRLR120NTRL vs AUIRLR120NTRR vs AUIRLR120NTR

 
PartNumberAUIRLR120NTRLAUIRLR120NTRRAUIRLR120NTR
DescriptionMOSFET AUTO 100V 1 N-CH HEXFET 185mOhmsRF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 185mOhmsMOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
ManufacturerInfineonInternational RectifierInternational Rectifier
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance185 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge13.3 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Pd Power Dissipation48 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101--
PackagingReelReelReel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm--
BrandInfineon / IR--
Fall Time22 ns22 ns22 ns
Product TypeMOSFET--
Rise Time35 ns35 ns35 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns23 ns23 ns
Typical Turn On Delay Time4 ns4 ns4 ns
Part # AliasesSP001516016--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case-TO-252-3TO-252-3
Pd Power Dissipation-48 W48 W
Vgs Gate Source Voltage-16 V16 V
Id Continuous Drain Current-10 A10 A
Vds Drain Source Breakdown Voltage-100 V100 V
Rds On Drain Source Resistance-185 mOhms185 mOhms
Qg Gate Charge-13.3 nC13.3 nC
Produttore Parte # Descrizione RFQ
Infineon / IR
Infineon / IR
AUIRLR120NTRL MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
AUIRLR120NTRR RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
AUIRLR120NTR MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
Infineon Technologies
Infineon Technologies
AUIRLR120NTRL RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
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