AUIRLR014NT

AUIRLR014NTRL vs AUIRLR014NTR vs AUIRLR014NTRPBF

 
PartNumberAUIRLR014NTRLAUIRLR014NTRAUIRLR014NTRPBF
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 140mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 140mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance140 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge7.9 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation28 W--
ConfigurationSingleSingle Quint Source-
QualificationAEC-Q101--
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min3.1 S--
Fall Time23 ns23 ns-
Product TypeMOSFET--
Rise Time47 ns47 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSP001516046--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-28 W-
Vgs Gate Source Voltage-+/- 16 V-
Id Continuous Drain Current-10 A-
Vds Drain Source Breakdown Voltage-55 V-
Vgs th Gate Source Threshold Voltage-1 V-
Rds On Drain Source Resistance-140 mOhms-
Qg Gate Charge-7.9 nC-
Forward Transconductance Min-3.1 S-
Produttore Parte # Descrizione RFQ
Infineon / IR
Infineon / IR
AUIRLR014NTRL MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms
AUIRLR014NTRR RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms
AUIRLR014NTR MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms
AUIRLR014NTRPBF Nuovo e originale
Infineon Technologies
Infineon Technologies
AUIRLR014NTRL RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms
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