AUIRG4BC30U

AUIRG4BC30U-S vs AUIRG4BC30USTRL vs AUIRG4BC30USTRR

 
PartNumberAUIRG4BC30U-SAUIRG4BC30USTRLAUIRG4BC30USTRR
DescriptionIGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBTIGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBTIGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
ManufacturerInfineonInfineon-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseDPAK-3DPAK-3-
Mounting StyleSMD/SMTSMD/SMT-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.95 V2.52 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C23 A23 A-
Pd Power Dissipation100 W100 W-
Minimum Operating Temperature- 55 C- 40 C-
QualificationAEC-Q101AEC-Q101-
PackagingTubeReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
Width9.65 mm9.65 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity1000800-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001512140SP001512374-
Unit Weight0.009185 oz0.009185 oz-
Maximum Operating Temperature-+ 150 C-
Continuous Collector Current Ic Max-23 A-
Gate Emitter Leakage Current-+/- 100 nA-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
AUIRG4BC30U-S IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30USTRL IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30USTRL IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30USTRR IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30U-S IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30US Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
AUIRG4BC30U-S. Nuovo e originale
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