| PartNumber | AUIRF7478QTR | AUIRF7478Q |
| Description | MOSFET Automotive MOSFET N ch 60V, 7A, 26mOhm | MOSFET Automotive MOSFET N ch 60V, 7A, 26mOhm |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 7 A | 7 A |
| Rds On Drain Source Resistance | 30 mOhms | 30 mOhms |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001522778 | SP001518452 |
| Unit Weight | 0.019048 oz | 0.019048 oz |
| Vgs th Gate Source Threshold Voltage | - | 3 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 21 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Type | - | Automotive MOSFET |
| Forward Transconductance Min | - | 17 S |
| Fall Time | - | 13 ns |
| Rise Time | - | 2.6 ns |
| Typical Turn Off Delay Time | - | 44 ns |
| Typical Turn On Delay Time | - | 7.7 ns |