AUIRF3205ZST

AUIRF3205ZSTRL vs AUIRF3205ZSTRLPBF vs AUIRF3205ZSTRR

 
PartNumberAUIRF3205ZSTRLAUIRF3205ZSTRLPBFAUIRF3205ZSTRR
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current44 A--
Rds On Drain Source Resistance6.5 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge76 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation170 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingReel-Reel
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min71 S--
Fall Time67 ns-67 ns
Product TypeMOSFET--
Rise Time95 ns-95 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns-45 ns
Typical Turn On Delay Time18 ns-18 ns
Part # AliasesSP001521632--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--170 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--44 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--6.5 mOhms
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
AUIRF3205ZSTRL MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms
AUIRF3205ZSTRL Darlington Transistors MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms
AUIRF3205ZSTRLPBF Nuovo e originale
AUIRF3205ZSTRR MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms
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