AUIRF2903ZST

AUIRF2903ZSTRL vs AUIRF2903ZSTRR vs AUIRF2903ZSTRLPBF

 
PartNumberAUIRF2903ZSTRLAUIRF2903ZSTRRAUIRF2903ZSTRLPBF
DescriptionMOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhmsRF Bipolar Transistors MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current235 A--
Rds On Drain Source Resistance2.4 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge160 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation231 W--
ConfigurationSingleSingle Quint Source-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min120 S--
Fall Time37 ns37 ns-
Product TypeMOSFET--
Rise Time100 ns100 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time48 ns48 ns-
Typical Turn On Delay Time24 ns24 ns-
Part # AliasesSP001521122--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-231 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-235 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-4 V-
Rds On Drain Source Resistance-2.4 mOhms-
Qg Gate Charge-160 nC-
Forward Transconductance Min-120 S-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
AUIRF2903ZSTRL MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
AUIRF2903ZSTRL MOSFET N-CH 30V 235A D2PAK
AUIRF2903ZSTRR RF Bipolar Transistors MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
AUIRF2903ZSTRLPBF Nuovo e originale
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