 | | | |
| PartNumber | APTGT200DA120D3G | APTGT200DA120G | APTGT200DA170D3G |
| Description | IGBT Modules DOR CC7095 | IGBT Modules DOR CC6109 | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 2 V |
| Continuous Collector Current at 25 C | 300 A | 280 A | 310 A |
| Gate Emitter Leakage Current | 400 nA | 500 nA | 400 nA |
| Pd Power Dissipation | 1.05 kW | 890 W | 1.25 kW |
| Package / Case | D3-11 | SP6 | D3-11 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 100 C | + 125 C |
| Packaging | Bulk | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | - | 3.880136 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT200DA60T3AG | IGBT Modules DOR CC3113 | |
| APTGT200DA120D3G | IGBT Modules DOR CC7095 | ||
| APTGT200DA120G | IGBT Modules DOR CC6109 | ||
| APTGT200DA170D3G | IGBT Modules Power Module - IGBT |