 | | | |
| PartNumber | APTGF50DA120CT1G | APTGF50DA120T1G | APTGF50DA60D1 |
| Description | IGBT Modules Power Module - SiC | IGBT Modules Power Module - IGBT | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 3.2 V | 3.2 V | - |
| Continuous Collector Current at 25 C | 75 A | 75 A | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Pd Power Dissipation | 312 W | 312 W | - |
| Package / Case | SP1-12 | SP1-12 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 100 C | + 100 C | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 2.821917 oz | 2.821917 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGF50DA120CT1G | IGBT Modules Power Module - SiC | |
| APTGF50DA120T1G | IGBT Modules Power Module - IGBT | ||
| APTGF50DA120CT1G | IGBT Modules Power Module - SiC | ||
| APTGF50DA60D1 | Nuovo e originale |