ALD110

ALD110900PAL vs ALD110900SAL vs ALD110902SAL

 
PartNumberALD110900PALALD110900SALALD110902SAL
DescriptionMOSFET Dual EPAD(R) N-ChMOSFET Dual EPAD(R) N-ChMOSFET Dual EPAD(R) N-Ch
ManufacturerAdvanced Linear DevicesAdvanced Linear DevicesAdvanced Linear Devices
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTSMD/SMT
Package / CasePDIP-8SOIC-8SOIC-8
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage10 V10 V10 V
Id Continuous Drain Current12 mA12 mA12 mA
Rds On Drain Source Resistance500 Ohms, 500 Ohms500 Ohms, 500 Ohms500 Ohms, 500 Ohms
Vgs th Gate Source Threshold Voltage20 mV20 mV180 mV
Vgs Gate Source Voltage10.6 V10.6 V10.6 V
Minimum Operating Temperature0 C0 C0 C
Maximum Operating Temperature+ 70 C+ 70 C+ 70 C
Pd Power Dissipation500 mW500 mW500 mW
ConfigurationDualDualDual
Channel ModeDepletionDepletionEnhancement
PackagingTubeTubeTube
ProductMOSFET Small SignalMOSFET Small SignalMOSFET Small Signal
SeriesALD110900PALD110900SALD110902S
Transistor Type2 N-Channel2 N-Channel2 N-Channel
TypeMOSFETMOSFETMOSFET
BrandAdvanced Linear DevicesAdvanced Linear DevicesAdvanced Linear Devices
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time10 ns10 ns10 ns
Typical Turn On Delay Time10 ns10 ns10 ns
Unit Weight0.032805 oz0.002998 oz0.002998 oz
Shipping Restrictions-
Produttore Parte # Descrizione RFQ
Advanced Linear Devices
Advanced Linear Devices
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