| PartNumber | AC857BSQ-7 | AC857BQ-7 | AC857CQ-7 |
| Description | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT General Purpose Transistor | Bipolar Transistors - BJT General Purpose Transistor |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Dual | Single | Single |
| Collector Emitter Voltage VCEO Max | - 45 V | - 45 V | - 45 V |
| Collector Base Voltage VCBO | - 50 V | - 50 V | - 50 V |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
| Collector Emitter Saturation Voltage | - 400 mV | - 650 mV | - 250 mV |
| Maximum DC Collector Current | - 200 mA | - 200 mA | - 100 mA |
| Gain Bandwidth Product fT | 100 MHz | 200 MHz | 200 MHz |
| Minimum Operating Temperature | - 55 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| DC Current Gain hFE Max | 475 | 475 | 800 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Continuous Collector Current | - 100 mA | - 100 mA | - 100 mA |
| Pd Power Dissipation | 200 mW | 350 mW | 350 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | Si |
| Package / Case | - | - | SOT-23-3 |
| Packaging | - | - | Reel |
| DC Collector/Base Gain hfe Min | - | - | 420 |
| Unit Weight | - | - | 0.000282 oz |