3LP01M-T

3LP01M-TL-E vs 3LP01M-TL vs 3LP01M-TL-H

 
PartNumber3LP01M-TL-E3LP01M-TL3LP01M-TL-H
DescriptionMOSFET NCH 1.5V DRIVE SERIES
ManufacturerON SemiconductorSANYOON Semiconductor
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-323-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance10.4 Ohms--
ConfigurationSingle-Single
PackagingReel-Digi-ReelR Alternate Packaging
Series3LP01M-3LP01M
Transistor Type1 P-Channel-1 P-Channel
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000176 oz-0.225789 oz
Package Case--SC-70, SOT-323
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--3-MCP
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--150mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--7.5pF @ 10V
FET Feature--Logic Level Gate, 2.5V Drive
Current Continuous Drain Id 25°C--100mA (Ta)
Rds On Max Id Vgs--10.4 Ohm @ 50mA, 4V
Vgs th Max Id---
Gate Charge Qg Vgs--1.43nC @ 10V
Pd Power Dissipation--150 mW
Fall Time--130 ns
Rise Time--55 ns
Id Continuous Drain Current--- 100 mA
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--10.4 Ohms
Typical Turn Off Delay Time--120 ns
Typical Turn On Delay Time--24 ns
Qg Gate Charge--1.43 nC
Forward Transconductance Min--110 mS
Produttore Parte # Descrizione RFQ
ON Semiconductor
ON Semiconductor
3LP01M-TL-E MOSFET NCH 1.5V DRIVE SERIES
3LP01M-TL-E IGBT Transistors MOSFET NCH 1.5V DRIVE SERIES
3LP01M-TL-H Nuovo e originale
3LP01M-TL Nuovo e originale
3LP01M-TL-H , RN5VD55AA Nuovo e originale
3LP01M-TL-TB-E Nuovo e originale
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