30A02CH-T

30A02CH-TL-E vs 30A02CH-TL vs 30A02CH-TL , RN5VD09CA ,

 
PartNumber30A02CH-TL-E30A02CH-TL30A02CH-TL , RN5VD09CA ,
DescriptionBipolar Transistors - BJT BIP PNP 0.7A 30V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 110 mV--
Maximum DC Collector Current- 700 mA--
Gain Bandwidth Product fT520 MHz--
Maximum Operating Temperature+ 150 C--
Series30A02CH--
DC Current Gain hFE Max500--
PackagingReel--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation700 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Produttore Parte # Descrizione RFQ
30A02CH-TL-E Bipolar Transistors - BJT BIP PNP 0.7A 30V
30A02CH-TL Nuovo e originale
30A02CH-TL , RN5VD09CA , Nuovo e originale
ON Semiconductor
ON Semiconductor
30A02CH-TL-E Bipolar Transistors - BJT BIP PNP 0.7A 30V
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