2SD1664T100Q

2SD1664T100Q vs 2SD1664T100Q,UN5215-(TX) vs 2SD1664T100Q,UN5215-(TX),BSS123E6327

 
PartNumber2SD1664T100Q2SD1664T100Q,UN5215-(TX)2SD1664T100Q,UN5215-(TX),BSS123E6327
DescriptionBipolar Transistors - BJT NPN 32V 1A
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max390--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.5 mm--
BrandROHM Semiconductor--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min82--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.004603 oz--
Produttore Parte # Descrizione RFQ
2SD1664T100Q Bipolar Transistors - BJT NPN 32V 1A
2SD1664T100Q TRANS NPN 32V 1A SOT-89
2SD1664T100Q,UN5215-(TX) Nuovo e originale
2SD1664T100Q,UN5215-(TX),BSS123E6327 Nuovo e originale
2SD1664T100Q-K Nuovo e originale
2SD1664T100Q/DAQJ Nuovo e originale
2SD1664T100QR Nuovo e originale
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