 | | ||
| PartNumber | 2SCR523EBTL | 2SCR523EB | 2SCR523EB TL |
| Description | Bipolar Transistors - BJT NPN General Purpose Amplification Transistor | ||
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | EMT-3F-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | 0.1 V | - |
| Maximum DC Collector Current | 200 mA | 200 mA | - |
| Gain Bandwidth Product fT | 350 MHz | 350 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2SCR523EB | 2SCR523EB | - |
| DC Current Gain hFE Max | 560 at 1 mA, 6 V | 560 at 1 mA at 6 V | - |
| Packaging | Reel | Reel | - |
| Brand | ROHM Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2SCR523EB | - | - |
| Package Case | - | EMT-3F | - |
| Pd Power Dissipation | - | 150 mW | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Collector Base Voltage VCBO | - | 50 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| DC Collector Base Gain hfe Min | - | 120 at 1 mA at 6 V | - |