2SC5706-T stock, 2SC5706-T, 2SC5706-TL-E


PartNumber	2SC5706-TL-E	2SC5706-TL-H	2SC5706-T-TL-E
Description	Bipolar Transistors - BJT BIP NPN 5A 50V	Bipolar Transistors - BJT BIP NPN 5A 50V	TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252VAR, LEAD FREE
Manufacturer	ON Semiconductor	SY	-
Product Category	Bipolar Transistors - BJT	Transistors (BJT) - Single	-
RoHS	Y	-	-
Mounting Style	SMD/SMT	SMD/SMT	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	100 V	-	-
Collector Base Voltage VCBO	100 V	-	-
Emitter Base Voltage VEBO	6 V	-	-
Collector Emitter Saturation Voltage	160 mV	160 mV	-
Maximum DC Collector Current	5 A	7.5 A	-
Gain Bandwidth Product fT	400 MHz	400 MHz	-
Minimum Operating Temperature	- 55 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Series	2SC5706	2SC5706	-
DC Current Gain hFE Max	560	560	-
Packaging	Reel	Reel	-
Brand	ON Semiconductor	-	-
DC Collector/Base Gain hfe Min	200	-	-
Pd Power Dissipation	15 W	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Factory Pack Quantity	700	-	-
Subcategory	Transistors	-	-
Unit Weight	0.009919 oz	0.063493 oz	-
Package Case	-	TO-252	-
Pd Power Dissipation	-	15 W	-
Collector Emitter Voltage VCEO Max	-	50 V	-
Collector Base Voltage VCBO	-	100 V	-
Emitter Base Voltage VEBO	-	6 V	-
Continuous Collector Current	-	5 A	-
DC Collector Base Gain hfe Min	-	200	-

Search Part Number : "2SC5706-T", Match & Start with "2SC5706-T" - Total : 4

Produttore	Parte #	Descrizione
	2SC5706-TL-E	Bipolar Transistors - BJT BIP NPN 5A 50V
	2SC5706-T-TL-E	TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252VAR, LEAD FREE
ON Semiconductor	2SC5706-TL-E	Bipolar Transistors - BJT BIP NPN 5A 50V
ON Semiconductor	2SC5706-TL-H	Bipolar Transistors - BJT BIP NPN 5A 50V

2SC5706-T