 | | | |
| PartNumber | 2N6718G-A-AB3-R | 2N6718G-B | 2N6718 |
| Description | Bipolar Transistors - BJT NPN Med Powe | ||
| Manufacturer | - | - | HGF |
| Product Category | - | - | IC Chips |
| Series | - | - | 2N6718 |
| Packaging | - | - | Bulk |
| Part Aliases | - | - | TR |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-237 |
| Pd Power Dissipation | - | - | 2 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Collector Emitter Voltage VCEO Max | - | - | 100 V |
| Transistor Polarity | - | - | NPN |
| Collector Emitter Saturation Voltage | - | - | 500 mV |
| Collector Base Voltage VCBO | - | - | 100 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| Maximum DC Collector Current | - | - | 2 A |
| Gain Bandwidth Product fT | - | - | 500 MHz |
| DC Collector Base Gain hfe Min | - | - | 50 at 250 mA 1 V |